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  n-channel power mosfet description the RM120N85T2 uses super trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. both conduction and switching power losses are minimized due to an extremely low combination of r ds(on) and q g . this device is ideal for high-freque ncy switching and synchronous rectification. general features ? v ds =85v,i d =120a r ds(on) <5.3m @ v gs =10v ? excelle nt gate charge x r ds(on) product(fom) ? very low o n-resistance r ds(on) ? 175 c operating temperature ? pb-free lead plating ? 100% uis tested application ? dc/dc converter ? ideal for h igh-frequency switching and synchronous rectification 100% uis tested! 100% ?vds tested! schematic diagram marking an d pin assignment to-220-3l top view package marking and ordering information device marking device device package reel size tape width quantity RM120N85T2 to-220-3l - - - absolute maximum ratings (t c =25  unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 85 v gate-source voltage v gs 20 v drain current-continuous i d 120 a drain current-continuous(t c =100 )  i d (100  )88 a pulsed drain current i dm 320 a maximum power dissipation p d 160 w derating factor 1.1 w/  single pulse avalanche energy (note 5) e as 784 mj operating junction and sto rage temperature range t j ,t stg -55 to 175  super trench 2016-11 rev:o15 120n85 RM120N85T2
thermal characteristic thermal resistance,junction-to-case (note 2) r jc 0.94 /w  electrical characteristics (t c =25  unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250a 85 - v zero gate voltage drain current i dss v ds =85v,v gs =0v - - 1 a gate-body leakage current i gss v gs =20v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250a 2.5 - 4.5 v drain-source on-state resistance r ds(on) v gs =10v, i d =60a - 4.5 5.3 m forward transconductance g fs v ds =10v,i d =60a 40 - - s dynamic characteristics (note4) input capacitance c lss - 5500 - pf output capacitance c oss - 830 - pf reverse transfer capacitance c rss v ds =40v,v gs =0v, f=1.0mhz - 57 - pf switching characteristics (note 4) turn-on delay time t d(on) - 13.5 - ns turn-on rise time t r - 12.5 - ns turn-off delay time t d(off) - 38 - ns turn-off fall time t f v dd =40v,i d =60a v gs =10v,r g =4.7 - 13.5 - ns total gate charge q g - 55 nc gate-source charge q gs - 21 nc gate-drain charge q gd v ds =40v,i d =60a, v gs =10v - 9 nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =120a - 1.2 v diode forward current (note 2) i s - - 120 a reverse recovery time t rr - 74 ns reverse recovery charge qrr t j = 25c, i f = i s di/dt = 100a/s (note3) - 176 nc notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to production 5. eas condition : tj=25 ,v  dd =42.5v,v g =10v,l=0.5mh,rg=25 " " " " " " "
test circuit 1) e as test circuit 2) gate charge test circuit 3) switch time test circuit " " " " " " "
vds drain-source voltage (v) figure 1 output characteristics vgs gate-source voltage (v) figure 2 transfer characteristics i d - drain current (a) figure 3 rdson- drain current t j -junction temperature(  ) figure 4 rdson-junctiontemperature qg gate charge (nc) figure 5 gate charge vsd source-drain voltage (v) figure 6 source- drain diode forward rdson on-resistance(m ? ) i d - drain current (a) i d - drain current (a) vgs gate-source voltage (v) i s - reverse drain current (a) normalized on-resistance " " " " " " " rating and characteristics curves (RM120N85T2)
vds drain-source voltage (v) figure 7 capacitance vs vds vds drain-source voltage (v) figure 8 safe operation area t j -junction temperature(  ) figure 9 bv dss vs junction temperature t j -junction temperature(  ) figure 10 current de-rating i d - drain current (a) c capacitance (pf) square wave pluse duration(sec) figure 11 normalized maximum transient thermal impedance i d - drain current (a) normalized bvdss r(t),normalized effective transient thermal im p edance " " " " " " " rating and characteristics curves (RM120N85T2)
to-220-3l package information dimensions in millimeters dimensions in inches symbol min. max. min. max. a 4.400 4.600 0.173 0.181 a1 2.250 2.550 0.089 0.100 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.330 0.650 0.013 0.026 c1 1.200 1.400 0.047 0.055 d 9.910 10.250 0.390 0.404 e 8.9500 9.750 0.352 0.384 e1 12.650 12.950 0.498 0.510 e 2.540 typ. 0.100 typ. e1 4.980 5.180 0.196 0.204 f 2.650 2.950 0.104 0.116 h 7.900 8.100 0.311 0.319 h 0.000 0.300 0.000 0.012 l 12.900 13.400 0.508 0.528 l1 2.850 3.250 0.112 0.128 v 7.500 ref. 0.295 ref. ? 3.400 3.800 0.134 0.150 " " " " " " "
rectron inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. rectron inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. data sheet specifications and its information contained are intended to provide a product description only. "typical" paramet- ers which may be included on rectron data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. rectron inc does not assume any liability arising out of the application or use of any product or circuit. rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of rectron inc. customers using or selling rectron components for use in such applications do so at their own risk and shall agree to fully indemnify rect- ron inc and its subsidiaries harmless against all claims, damages and expendit- ures. disclaimer notice


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